收藏!半导体术语中英文对照大全

半导体失效分析工程师

<h3>半导体产业作为一个起源于国外的技术,很多相关的技术术语都是用英文表述。且由于很多从业者都有海外经历,或者他们习惯于用英文表述相关的工艺和技术节点,那就导致很多的英文术语被翻译为中文之后,很多人不能对照得上,或者不知道怎么翻译。</h3><h3><br></h3><h3>在这里我们整理一些常用的半导体术语的中英文版本,希望对大家有所帮助。如果当中有出错,请帮忙纠正,谢谢!</h3><h3><br></h3><h3>常用半导体中英对照表</h3><h3><br></h3><h3>离子注入机 ion implanter</h3><h3><br></h3><h3>LSS理论 Lindhand Scharff and Schiott theory,又称"林汉德-斯卡夫-斯高特理论"。</h3><h3><br></h3><h3>沟道效应 channeling effect</h3><h3><br></h3><h3>射程分布 range distribution</h3><h3><br></h3><h3>深度分布 depth distribution</h3><h3><br></h3><h3>投影射程 projected range</h3><h3><br></h3><h3>阻止距离 stopping distance</h3><h3><br></h3><h3>阻止本领 stopping power</h3><h3><br></h3><h3>标准阻止截面 standard stopping cross section</h3><h3><br></h3><h3>退火 annealing</h3><h3><br></h3><h3>激活能 activation energy</h3><h3><br></h3><h3>等温退火 isothermal annealing</h3><h3><br></h3><h3>激光退火 laser annealing</h3><h3><br></h3><h3>应力感生缺陷 stress-induced defect</h3><h3><br></h3><h3>择优取向 preferred orientation</h3><h3><br></h3><h3>制版工艺 mask-making technology</h3><h3><br></h3><h3>图形畸变 pattern distortion</h3><h3><br></h3><h3>初缩 first minification</h3><h3><br></h3><h3>精缩 final minification</h3><h3><br></h3><h3>母版 master mask</h3><h3><br></h3><h3>铬版 chromium plate</h3><h3><br></h3><h3>干版 dry plate</h3><h3><br></h3><h3>乳胶版 emulsion plate</h3><h3><br></h3><h3>透明版 see-through plate</h3><h3><br></h3><h3>高分辨率版 high resolution plate, HRP</h3><h3><br></h3><h3>超微粒干版 plate for ultra-microminiaturization</h3><h3><br></h3><h3>掩模 mask</h3><h3><br></h3><h3>掩模对准 mask alignment</h3><h3><br></h3><h3>对准精度 alignment precision</h3><h3><br></h3><h3>光刻胶 photoresist,又称"光致抗蚀剂"。</h3><h3><br></h3><h3>负性光刻胶 negative photoresist</h3><h3><br></h3><h3>正性光刻胶 positive photoresist</h3><h3><br></h3><h3>无机光刻胶 inorganic resist</h3><h3><br></h3><h3>多层光刻胶 multilevel resist</h3><h3><br></h3><h3>电子束光刻胶 electron beam resist</h3><h3><br></h3><h3>X射线光刻胶 X-ray resist</h3><h3><br></h3><h3>刷洗 scrubbing</h3><h3><br></h3><h3>甩胶 spinning</h3><h3><br></h3><h3>涂胶 photoresist coating</h3><h3><br></h3><h3>后烘 postbaking</h3><h3><br></h3><h3>光刻 photolithography</h3><h3><br></h3><h3>X射线光刻 X-ray lithography</h3><h3><br></h3><h3>电子束光刻 electron beam lithography</h3><h3><br></h3><h3>离子束光刻 ion beam lithography</h3><h3><br></h3><h3>深紫外光刻 deep-UV lithography</h3><h3><br></h3><h3>光刻机 mask aligner</h3><h3><br></h3><h3>投影光刻机 projection mask aligner</h3><h3><br></h3><h3>曝光 exposure</h3><h3><br></h3><h3>接触式曝光法 contact exposure method</h3><h3><br></h3><h3>接近式曝光法 proximity exposure method</h3><h3><br></h3><h3>光学投影曝光法 optical projection exposure method</h3><h3><br></h3><h3>电子束曝光系统 electron beam exposure system</h3><h3><br></h3><h3>分步重复系统 step-and-repeat system</h3><h3><br></h3><h3>显影 development</h3><h3><br></h3><h3>线宽 linewidth</h3><h3><br></h3><h3>去胶 stripping of photoresist</h3><h3><br></h3><h3>氧化去胶 removing of photoresist by oxidation</h3><h3><br></h3><h3>等离子[体]去胶 removing of photoresist by plasma</h3><h3><br></h3><h3>刻蚀 etching</h3><h3><br></h3><h3>干法刻蚀 dry etching</h3><h3><br></h3><h3>反应离子刻蚀 reactive ion etching, RIE</h3><h3><br></h3><h3>各向同性刻蚀 isotropic etching</h3><h3><br></h3><h3>各向异性刻蚀 anisotropic etching</h3><h3><br></h3><h3>反应溅射刻蚀 reactive sputter etching</h3><h3><br></h3><h3>离子铣 ion beam milling,又称"离子磨削"。</h3><h3><br></h3><h3>等离子[体]刻蚀 plasma etching</h3><h3><br></h3><h3>钻蚀 undercutting</h3><h3><br></h3><h3>剥离技术 lift-off technology,又称"浮脱工艺"。</h3><h3><br></h3><h3>终点监测 endpoint monitoring</h3><h3><br></h3><h3>金属化 metallization</h3><h3><br></h3><h3>互连 interconnection</h3><h3><br></h3><h3>多层金属化 multilevel metallization</h3><h3><br></h3><h3>电迁徙 electromigration</h3><h3><br></h3><h3>回流 reflow</h3><h3><br></h3><h3>磷硅玻璃 phosphorosilicate glass</h3><h3><br></h3><h3>硼磷硅玻璃 boron-phosphorosilicate glass</h3><h3><br></h3><h3>钝化工艺 passivation technology</h3><h3><br></h3><h3>多层介质钝化 multilayer dielectric passivation</h3><h3><br></h3><h3>划片 scribing</h3><h3><br></h3><h3>电子束切片 electron beam slicing</h3><h3><br></h3><h3>烧结 sintering</h3><h3><br></h3><h3>印压 indentation</h3><h3><br></h3><h3>热压焊 thermocompression bonding</h3><h3><br></h3><h3>热超声焊 thermosonic bonding</h3><h3><br></h3><h3>冷焊 cold welding</h3><h3><br></h3><h3>点焊 spot welding</h3><h3><br></h3><h3>球焊 ball bonding</h3><h3><br></h3><h3>楔焊 wedge bonding</h3><h3><br></h3><h3>内引线焊接 inner lead bonding</h3><h3><br></h3><h3>外引线焊接 outer lead bonding</h3><h3><br></h3><h3>梁式引线 beam lead</h3><h3><br></h3><h3>装架工艺 mounting technology</h3><h3><br></h3><h3>附着 adhesion</h3><h3><br></h3><h3>封装 packaging</h3><h3><br></h3><h3>金属封装 metallic packaging</h3><h3><br></h3><h3>陶瓷封装 ceramic packaging</h3><h3><br></h3><h3>扁平封装 flat packaging</h3><h3><br></h3><h3>塑封 plastic package</h3><h3><br></h3><h3>玻璃封装 glass packaging</h3><h3><br></h3><h3>微封装 micropackaging,又称"微组装"。</h3><h3><br></h3><h3>管壳 package</h3><h3><br></h3><h3>管芯 die</h3><h3><br></h3><h3>引线键合 lead bonding</h3><h3><br></h3><h3>引线框式键合 lead frame bonding</h3><h3><br></h3><h3>带式自动键合 tape automated bonding, TAB</h3><h3><br></h3><h3>激光键合 laser bonding</h3><h3><br></h3><h3>超声键合 ultrasonic bonding</h3><h3><br></h3><h3>红外键合 infrared bonding</h3><h3><br></h3> <h3><br></h3><h3>微电子辞典大集合</h3><h3>(按首字母顺序排序)</h3><h3><br></h3><h3>A</h3><h3><br></h3><h3>Abrupt junction 突变结</h3><h3>Accelerated testing 加速实验 </h3><h3>Acceptor 受主 </h3><h3>Acceptor atom 受主原子 </h3><h3>Accumulation 积累、堆积 </h3><h3>Accumulating contact 积累接触 </h3><h3>Accumulation region 积累区 </h3><h3>Accumulation layer 积累层 </h3><h3>Active region 有源区 </h3><h3>Active component 有源元 </h3><h3>Active device 有源器件 </h3><h3>Activation 激活 </h3><h3>Activation energy 激活能 </h3><h3>Active region 有源(放大)区 </h3><h3>Admittance 导纳 </h3><h3>Allowed band 允带 </h3><h3>Alloy-junction device</h3><h3>合金结器件 Aluminum(Aluminium) 铝 </h3><h3>Aluminum oxide 铝氧化物 </h3><h3>Aluminum passivation 铝钝化 </h3><h3>Ambipolar 双极的</h3><h3>Ambient temperature 环境温度 </h3><h3>Amorphous 无定形的,非晶体的 </h3><h3>Amplifier 功放 扩音器 放大器 </h3><h3>Analogue(Analog) comparator 模拟比较器 Angstrom 埃 </h3><h3>Anneal 退火 </h3><h3>Anisotropic 各向异性的 </h3><h3>Anode 阳极 </h3><h3>Arsenic (AS) 砷 </h3><h3>Auger 俄歇 </h3><h3>Auger process 俄歇过程 </h3><h3>Avalanche 雪崩 </h3><h3>Avalanche breakdown 雪崩击穿 </h3><h3>Avalanche excitation雪崩激发 </h3><h3><br></h3><h3>B</h3><h3><br></h3><h3>Background carrier 本底载流子 </h3><h3>Background doping 本底掺杂 </h3><h3>Backward 反向 </h3><h3>Backward bias 反向偏置 </h3><h3>Ballasting resistor 整流电阻 </h3><h3>Ball bond 球形键合 </h3><h3>Band 能带 </h3><h3>Band gap 能带间隙 </h3><h3>Barrier 势垒 </h3><h3>Barrier layer 势垒层 </h3><h3>Barrier width 势垒宽度 </h3><h3>Base 基极 </h3><h3>Base contact 基区接触 </h3><h3>Base stretching 基区扩展效应 </h3><h3>Base transit time 基区渡越时间 </h3><h3>Base transport efficiency基区输运系数 </h3><h3>Base-width modulation基区宽度调制 </h3><h3>Basis vector 基矢 </h3><h3>Bias 偏置 </h3><h3>Bilateral switch 双向开关 </h3><h3>Binary code 二进制代码</h3><h3>Binary compound semiconductor 二元化合物半导体 </h3><h3>Bipolar 双极性的 </h3><h3>Bipolar Junction Transistor (BJT)双极晶体管 </h3><h3>Bloch 布洛赫 </h3><h3>Blocking band 阻挡能带 </h3><h3>Blocking contact 阻挡接触 </h3><h3>Body - centered 体心立方 </h3><h3>Body-centred cubic structure 体立心结构 </h3><h3>Boltzmann 波尔兹曼 </h3><h3>Bond 键、键合 </h3><h3>Bonding electron 价电子 </h3><h3>Bonding pad 键合点 </h3><h3>Bootstrap circuit 自举电路 </h3><h3>Bootstrapped emitter follower 自举射极跟随器</h3><h3>Boron 硼 </h3><h3>Borosilicate glass 硼硅玻璃 </h3><h3>Boundary condition 边界条件 </h3><h3>Bound electron 束缚电子 </h3><h3>Breadboard 模拟板、实验板 </h3><h3>Break down 击穿 </h3><h3>Break over 转折 </h3><h3>Brillouin 布里渊 </h3><h3>Brillouin zone 布里渊区 </h3><h3>Built-in 内建的 </h3><h3>Build-in electric field 内建电场 </h3><h3>Bulk 体/体内 Bulk absorption 体吸收 </h3><h3>Bulk generation 体产生 </h3><h3>Bulk recombination 体复合 </h3><h3>Burn - in 老化 </h3><h3>Burn out 烧毁 </h3><h3>Buried channel 埋沟 </h3><h3>Buried diffusion region 隐埋扩散区 </h3><h3><br></h3><h3>C</h3><h3><br></h3><h3>Can 外壳 </h3><h3>Capacitance 电容 </h3><h3>Capture cross section 俘获截面 </h3><h3>Capture carrier 俘获载流子 </h3><h3>Carrier 载流子、载波</h3><h3>Carry bit 进位位 </h3><h3>Carry-in bit 进位输入 </h3><h3>Carry-out bit 进位输出 </h3><h3>Cascade 级联 </h3><h3>Case 管壳 </h3><h3>Cathode 阴极</h3><h3>Center 中心 </h3><h3>Ceramic 陶瓷(的) </h3><h3>Channel 沟道 </h3><h3>Channel breakdown 沟道击穿</h3><h3>Channel current 沟道电流 </h3><h3>Channel doping 沟道掺杂 </h3><h3>Channel shortening 沟道缩短 </h3><h3>Channel width 沟道宽度 </h3><h3>Characteristic impedance 特征阻抗 </h3><h3>Charge 电荷、充电 </h3><h3>Charge-compensation effects 电荷补偿效应 </h3><h3>Charge conservation 电荷守恒 </h3><h3>Charge neutrality condition 电中性条件 </h3><h3>Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储 </h3><h3>Chemmical etching 化学腐蚀法 </h3><h3>Chemically-Polish 化学抛光 </h3><h3>Chemmically-Mechanically Polish (CMP) 化学机械抛光 Chip 芯片 </h3><h3>Chip yield 芯片成品率 </h3><h3>Clamped 箝位 </h3><h3>Clamping diode 箝位二极管 </h3><h3>Cleavage plane 解理面 </h3><h3>Clock rate 时钟频率 </h3><h3>Clock generator 时钟发生器 </h3><h3>Clock flip-flop 时钟触发器 </h3><h3>Close-packed structure 密堆积结构 </h3><h3>Close-loop gain 闭环增益</h3><h3>Collector 集电极 </h3><h3>Collision 碰撞 </h3><h3>Compensated OP-AMP 补偿运放 </h3><h3>Common-base/collector/emitter connection 共基极/集电极/发射极连接 </h3><h3>Common-gate/drain/source connection 共栅/漏/源连接 </h3><h3>Common-mode gain 共模增益 </h3><h3>Common-mode 共模输入 </h3><h3>Common-mode rejection ratio (CMRR) 共模抑制比 </h3><h3>Compatibility 兼容性 </h3><h3>Compensation 补偿 </h3><h3>Compensated impurities 补偿杂质 </h3><h3>Compensated semiconductor 补偿半导体 </h3><h3>Complementary Darlington circuit 互补达林顿电路 </h3><h3>Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(CMOS) </h3><h3>互补金属氧化物半导体场效应晶体管 </h3><h3>Complementary error function 余误差函数 </h3><h3>Computer-aided design (CAD)/test(CAT)/manufacture(CAM) 计算机辅助设计/ 测试 /制 </h3><h3>造 </h3><h3>Compound Semiconductor 化合物半导体 </h3><h3>Conductance 电导 </h3><h3>Conduction band (edge) 导带(底) </h3><h3>Conduction level/state 导带态 </h3><h3>Conductor 导体</h3><h3>Conductivity 电导率 </h3><h3>Configuration 组态</h3><h3>Conlomb 库仑 </h3><h3>Conpled Configuration Devices 结构组态 </h3><h3>Constants 物理常数 </h3><h3>Constant energy surface 等能面 </h3><h3>Constant-source diffusion恒定源扩散 </h3><h3>Contact 接触 </h3><h3>Contamination 治污 </h3><h3>Continuity equation 连续性方程</h3><h3>Contact hole 接触孔 </h3><h3>Contact potential 接触电势 </h3><h3>Continuity condition 连续性条件 </h3><h3>Contra doping 反掺杂 </h3><h3>Controlled 受控的 </h3><h3>Converter 转换器 </h3><h3>Conveyer 传输器 </h3><h3>Copper interconnection system 铜互连系统</h3><h3>Couping 耦合 </h3><h3>Covalent 共阶的 </h3><h3>Crossover 跨交 </h3><h3>Critical 临界的 </h3><h3>Crossunder 穿交 </h3><h3>Crucible坩埚 </h3><h3>Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶 </h3><h3>格 </h3><h3>Current density 电流密度</h3><h3>Curvature 曲率 </h3><h3>Cut off 截止 </h3><h3>Current drift/dirve/sharing 电流漂移/驱动/共享 </h3><h3>Current Sense 电流取样 </h3><h3>Curvature 弯曲 </h3><h3>Custom integrated circuit 定制集成电路 </h3><h3>Cylindrical 柱面的 </h3><h3>Czochralshicrystal 直立单晶 </h3><h3>Czochralski technique 切克劳斯基技术(Cz法直拉晶体J) </h3><h3><br></h3> <h3>D</h3><h3><br></h3><h3>Dangling bonds 悬挂键 </h3><h3>Dark current 暗电流 </h3><h3>Dead time 空载时间 </h3><h3>Debye length 德拜长度 </h3><h3>De.broglie 德布洛意 </h3><h3>Decderate 减速 </h3><h3>Decibel (dB) 分贝 </h3><h3>Decode 译码 </h3><h3>Deep acceptor level 深受主能级 </h3><h3>Deep donor level 深施主能级 </h3><h3>Deep impurity level 深度杂质能级 </h3><h3>Deep trap 深陷阱 </h3><h3>Defeat 缺陷 </h3><h3>Degenerate semiconductor 简并半导体 </h3><h3>Degeneracy 简并度 </h3><h3>Degradation 退化 </h3><h3>Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度 </h3><h3>Delay 延迟 Density 密度 </h3><h3>Density of states 态密度 </h3><h3>Depletion 耗尽 </h3><h3>Depletion approximation 耗尽近似 </h3><h3>Depletion contact 耗尽接触 </h3><h3>Depletion depth 耗尽深度 </h3><h3>Depletion effect 耗尽效应 </h3><h3>Depletion layer 耗尽层 </h3><h3>Depletion MOS 耗尽MOS </h3><h3>Depletion region 耗尽区 </h3><h3>Deposited film 淀积薄膜 </h3><h3>Deposition process 淀积工艺 </h3><h3>Design rules 设计规则 </h3><h3>Die 芯片(复数dice) </h3><h3>Diode 二极管 </h3><h3>Dielectric 介电的 </h3><h3>Dielectric isolation 介质隔离 </h3><h3>Difference-mode 差模输入 </h3><h3>Differential amplifier 差分放大器 </h3><h3>Differential capacitance 微分电容 </h3><h3>Diffused junction 扩散结 </h3><h3>Diffusion 扩散 </h3><h3>Diffusion coefficient 扩散系数 </h3><h3>Diffusion constant 扩散常数</h3><h3>Diffusivity 扩散率 </h3><h3>Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉 </h3><h3>Digital circuit 数字电路 </h3><h3>Dipole domain 偶极畴 </h3><h3>Dipole layer 偶极层 </h3><h3>Direct-coupling 直接耦合 </h3><h3>Direct-gap semiconductor 直接带隙半导体 </h3><h3>Direct transition 直接跃迁 </h3><h3>Discharge 放电 </h3><h3>Discrete component 分立元件 </h3><h3>Dissipation 耗散 </h3><h3>Distribution 分布 </h3><h3>Distributed capacitance 分布电容 </h3><h3>Distributed model 分布模型 </h3><h3>Displacement 位移 Dislocation 位错 </h3><h3>Domain 畴 Donor 施主 </h3><h3>Donor exhaustion 施主耗尽 </h3><h3>Dopant 掺杂剂 </h3><h3>Doped semiconductor 掺杂半导体 </h3><h3>Doping concentration 掺杂浓度 </h3><h3>Double-diffusive MOS(DMOS)双扩散MOS. </h3><h3>Drift 漂移 Drift field 漂移电场 </h3><h3>Drift mobility 迁移率 </h3><h3>Dry etching 干法腐蚀 </h3><h3>Dry/wet oxidation 干/湿法氧化</h3><h3>Dose 剂量 </h3><h3>Duty cycle 工作周期 </h3><h3>Dual-in-line package (DIP) 双列直插式封装 </h3><h3>Dynamics 动态 </h3><h3>Dynamic characteristics 动态属性 </h3><h3>Dynamic impedance 动态阻抗 </h3><h3><br></h3><h3>E</h3><h3><br></h3><h3>Early effect 厄利效应 </h3><h3>Early failure 早期失效 </h3><h3>Effective mass 有效质量 </h3><h3>Einstein relation(ship) 爱因斯坦关系 </h3><h3>Electric Erase Programmable Read Only Memory(E2PROM) 一次性电可擦除只读存储器 </h3><h3>Electrode 电极 </h3><h3>Electrominggratim 电迁移 </h3><h3>Electron affinity 电子亲和势 </h3><h3>Electronic -grade 电子能 </h3><h3>Electron-beam photo-resist exposure 光致抗蚀剂的电子束曝光 </h3><h3>Electron gas 电子气 </h3><h3>Electron-grade water 电子级纯水 </h3><h3>Electron trapping center 电子俘获中心 </h3><h3>Electron Volt (eV) 电子伏 </h3><h3>Electrostatic 静电的</h3><h3>Element 元素/元件/配件 </h3><h3>Elemental semiconductor 元素半导体</h3><h3>Ellipse 椭圆 </h3><h3>Ellipsoid 椭球 </h3><h3>Emitter 发射极 </h3><h3>Emitter-coupled logic 发射极耦合逻辑</h3><h3>Emitter-coupled pair 发射极耦合对 </h3><h3>Emitter follower 射随器 </h3><h3>Empty band 空带 </h3><h3>Emitter crowding effect 发射极集边(拥挤)效应 </h3><h3>Endurance test =life test 寿命测试 </h3><h3>Energy state 能态 </h3><h3>Energy momentum diagram 能量-动量(E-K)图 </h3><h3>Enhancement mode 增强型模式 </h3><h3>Enhancement MOS 增强性</h3><h3>MOS Entefic (低)共溶的 </h3><h3>Environmental test 环境测试 </h3><h3>Epitaxial 外延的 </h3><h3>Epitaxial layer 外延层 </h3><h3>Epitaxial slice 外延片 </h3><h3>Expitaxy 外延 </h3><h3>Equivalent curcuit 等效电路 </h3><h3>Equilibrium majority /minority carriers 平衡多数/少数载流子 </h3><h3>Erasable Programmable ROM (EPROM)可搽取(编程)存储器 </h3><h3>Error function complement 余误差函数 </h3><h3>Etch 刻蚀 </h3><h3>Etchant 刻蚀剂 </h3><h3>Etching mask 抗蚀剂掩模 </h3><h3>Excess carrier 过剩载流子 </h3><h3>Excitation energy 激发能 </h3><h3>Excited state 激发态 </h3><h3>Exciton 激子 </h3><h3>Extrapolation 外推法 </h3><h3>Extrinsic 非本征的 </h3><h3>Extrinsic semiconductor 杂质半导体 </h3><h3><br></h3> <h3>F</h3><h3><br></h3><h3>Face - centered 面心立方 </h3><h3>Fall time 下降时间 </h3><h3>Fan-in 扇入 </h3><h3>Fan-out 扇出 </h3><h3>Fast recovery 快恢复 </h3><h3>Fast surface states 快界面态 </h3><h3>Feedback 反馈 </h3><h3>Fermi level 费米能级 </h3><h3>Fermi-Dirac Distribution 费米-狄拉克分布 </h3><h3>Femi potential 费米势 </h3><h3>Fick equation 菲克方程(扩散) </h3><h3>Field effect transistor 场效应晶体管 </h3><h3>Field oxide 场氧化层 </h3><h3>Filled band 满带 </h3><h3>Film 薄膜 </h3><h3>Flash memory 闪烁存储器 </h3><h3>Flat band 平带 </h3><h3>Flat pack 扁平封装 </h3><h3>Flicker noise 闪烁(变)噪声 </h3><h3>Flip-flop toggle 触发器翻转 </h3><h3>Floating gate 浮栅 </h3><h3>Fluoride etch 氟化氢刻蚀 </h3><h3>Forbidden band 禁带 </h3><h3>Forward bias 正向偏置 </h3><h3>Forward blocking /conducting正向阻断/导通 </h3><h3>Frequency deviation noise频率漂移噪声 </h3><h3>Frequency response 频率响应 </h3><h3>Function 函数 </h3><h3><br></h3><h3>G</h3><h3><br></h3><h3>Gain 增益 Gallium-Arsenide(GaAs) 砷化钾 </h3><h3>Gamy ray r 射线 </h3><h3>Gate 门、栅、控制极 </h3><h3>Gate oxide 栅氧化层 </h3><h3>Gauss(ian) 高斯 </h3><h3>Gaussian distribution profile 高斯掺杂分布</h3><h3>Generation-recombination 产生-复合 </h3><h3>Geometries 几何尺寸 </h3><h3>Germanium(Ge) 锗 </h3><h3>Graded 缓变的 </h3><h3>Graded (gradual) channel 缓变沟道 </h3><h3>Graded junction 缓变结 </h3><h3>Grain 晶粒 </h3><h3>Gradient 梯度 </h3><h3>Grown junction 生长结 </h3><h3>Guard ring 保护环 </h3><h3>Gummel-Poom model 葛谋-潘 模型 </h3><h3>Gunn - effect 狄氏效应 </h3><h3><br></h3><h3>H</h3><h3><br></h3><h3>Hardened device 辐射加固器件 </h3><h3>Heat of formation 形成热 </h3><h3>Heat sink 散热器、热沉 </h3><h3>Heavy/light hole band 重/轻 空穴带 </h3><h3>Heavy saturation 重掺杂 </h3><h3>Hell - effect 霍尔效应 </h3><h3>Heterojunction 异质结 </h3><h3>Heterojunction structure 异质结结构 </h3><h3>Heterojunction Bipolar Transistor(HBT)异质结双极型晶体 </h3><h3>High field property 高场特性 </h3><h3>High-performance MOS.( H-MOS)高性能</h3><h3>MOS. Hormalized 归一化 </h3><h3>Horizontal epitaxial reactor 卧式外延反应器 </h3><h3>Hot carrior 热载流子 </h3><h3>Hybrid integration 混合集成 </h3><h3><br></h3> <h3>I</h3><h3><br></h3><h3>Image - force 镜象力 </h3><h3>Impact ionization 碰撞电离 </h3><h3>Impedance 阻抗 </h3><h3>Imperfect structure 不完整结构 </h3><h3>Implantation dose 注入剂量 </h3><h3>Implanted ion 注入离子 </h3><h3>Impurity 杂质</h3><h3>Impurity scattering 杂志散射 </h3><h3>Incremental resistance 电阻增量(微分电阻)</h3><h3>In-contact mask 接触式掩模 </h3><h3>Indium tin oxide (ITO) 铟锡氧化物 </h3><h3>Induced channel 感应沟道 </h3><h3>Infrared 红外的 </h3><h3>Injection 注入 </h3><h3> offset voltage 输入失调电压 </h3><h3>Insulator 绝缘体 </h3><h3>Insulated Gate FET(IGFET)绝缘栅</h3><h3>FET Integrated injection logic集成注入逻辑 </h3><h3>Integration 集成、积分 </h3><h3>Interconnection 互连 </h3><h3>Interconnection time delay 互连延时 </h3><h3>Interdigitated structure 交互式结构 </h3><h3>Interface 界面 </h3><h3>Interference 干涉 </h3><h3>International system of unions国际单位制 </h3><h3>Internally scattering 谷间散射 </h3><h3>Interpolation 内插法 </h3><h3>Intrinsic 本征的 </h3><h3>Intrinsic semiconductor 本征半导体 </h3><h3>Inverse operation 反向工作 </h3><h3>Inversion 反型 </h3><h3>Inverter 倒相器 </h3><h3>Ion 离子</h3><h3>Ion beam 离子束 </h3><h3>Ion etching 离子刻蚀 </h3><h3>Ion implantation 离子注入 </h3><h3>Ionization 电离 </h3><h3>Ionization energy 电离能 </h3><h3>Irradiation 辐照 </h3><h3>Isolation land 隔离岛 </h3><h3>Isotropic 各向同性 </h3><h3><br></h3><h3>J</h3><h3><br></h3><h3>Junction FET(JFET) 结型场效应管 </h3><h3>Junction isolation 结隔离 </h3><h3>Junction spacing 结间距 </h3><h3>Junction side-wall 结侧壁 </h3><h3><br></h3><h3>L</h3><h3><br></h3><h3>Latch up 闭锁 </h3><h3>Lateral 横向的 </h3><h3>Lattice 晶格 </h3><h3>Layout 版图 </h3><h3>Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟 </h3><h3>/晶格缺陷/晶格畸变 </h3><h3>Leakage current (泄)漏电流 </h3><h3>Level shifting 电平移动 </h3><h3>Life time 寿命 </h3><h3>linearity 线性度 </h3><h3>Linked bond 共价键 </h3><h3>Liquid Nitrogen 液氮 </h3><h3>Liquid-phase epitaxial growth technique 液相外延生长技术 </h3><h3>Lithography 光刻 </h3><h3>Light Emitting Diode(LED) 发光二极管 </h3><h3>Load line or Variable 负载线 </h3><h3>Locating and Wiring 布局布线 </h3><h3>Longitudinal 纵向的 </h3><h3>Logic swing 逻辑摆幅 </h3><h3>Lorentz 洛沦兹 </h3><h3>Lumped model 集总模型 </h3> <h3>M</h3><h3><br></h3><h3>Majority carrier 多数载流子 </h3><h3>Mask 掩膜板,光刻板 </h3><h3>Mask level 掩模序号 </h3><h3>Mask set 掩模组 </h3><h3>Mass - action law质量守恒定律</h3><h3>Master-slave D flip-flop主从D触发器 </h3><h3>Matching 匹配 </h3><h3>Maxwell 麦克斯韦 </h3><h3>Mean free path 平均自由程 </h3><h3>Meandered emitter junction梳状发射极结 </h3><h3>Mean time before failure (MTBF) 平均工作时间 </h3><h3>Megeto - resistance 磁阻 </h3><h3>Mesa 台面 </h3><h3>MESFET-Metal Semiconductor金属半导体FET </h3><h3>Metallization 金属化 </h3><h3>Microelectronic technique 微电子技术 </h3><h3>Microelectronics 微电子学 </h3><h3>Millen indices 密勒指数 </h3><h3>Minority carrier 少数载流子 </h3><h3>Misfit 失配 </h3><h3>Mismatching 失配 </h3><h3>Mobile ions 可动离子 </h3><h3>Mobility 迁移率 </h3><h3>Module 模块 </h3><h3>Modulate 调制 </h3><h3>Molecular crystal分子晶体 </h3><h3>Monolithic IC 单片IC MOSFET金属氧化物半导体场效应晶体管 </h3><h3>Mos. Transistor(MOST )MOS. 晶体管 </h3><h3>Multiplication 倍增 </h3><h3>Modulator 调制 </h3><h3>Multi-chip IC 多芯片IC </h3><h3>Multi-chip module(MCM) 多芯片模块 </h3><h3>Multiplication coefficient倍增因子 </h3><h3><br></h3><h3>N</h3><h3><br></h3><h3>Naked chip 未封装的芯片(裸片) </h3><h3>Negative feedback 负反馈 </h3><h3>Negative resistance 负阻 </h3><h3>Nesting 套刻 </h3><h3>Negative-temperature-coefficient 负温度系数 </h3><h3>Noise margin 噪声容限 </h3><h3>Nonequilibrium 非平衡 </h3><h3>Nonrolatile 非挥发(易失)性 </h3><h3>Normally off/on 常闭/开 </h3><h3>Numerical analysis 数值分析 </h3> <h3>O<br></h3><h3><br></h3><h3>Occupied band 满带 </h3><h3>Officienay 功率 </h3><h3>Offset 偏移、失调 </h3><h3>On standby 待命状态 </h3><h3>Ohmic contact 欧姆接触 </h3><h3>Open circuit 开路 </h3><h3>Operating point 工作点 </h3><h3>Operating bias 工作偏置 </h3><h3>Operational amplifier (OPAMP)运算放大器 </h3><h3>Optical photon =photon 光子 </h3><h3>Optical quenching光猝灭 </h3><h3>Optical transition 光跃迁 </h3><h3>Optical-coupled isolator光耦合隔离器 </h3><h3>Organic semiconductor有机半导体 </h3><h3>Orientation 晶向、定向 </h3><h3>Outline 外形 </h3><h3>Out-of-contact mask非接触式掩模 </h3><h3>Output characteristic 输出特性 </h3><h3>Output voltage swing 输出电压摆幅 </h3><h3>Overcompensation 过补偿 </h3><h3>Over-current protection 过流保护 </h3><h3>Over shoot 过冲 </h3><h3>Over-voltage protection 过压保护 </h3><h3>Overlap 交迭 </h3><h3>Overload 过载 </h3><h3>Oscillator 振荡器 </h3><h3>Oxide 氧化物 </h3><h3>Oxidation 氧化 </h3><h3>Oxide passivation 氧化层钝化 </h3><h3><br></h3><h3>P</h3><h3><br></h3><h3>Package 封装</h3><h3>Pad 压焊点 </h3><h3>Parameter 参数 </h3><h3>Parasitic effect 寄生效应 </h3><h3>Parasitic oscillation 寄生振荡 </h3><h3>Passination 钝化 </h3><h3>Passive component 无源元件 </h3><h3>Passive device 无源器件 </h3><h3>Passive surface 钝化界面 </h3><h3>Parasitic transistor 寄生晶体管 </h3><h3>Peak-point voltage 峰点电压 </h3><h3>Peak voltage 峰值电压 </h3><h3>Permanent-storage circuit 永久存储电路 </h3><h3>Period 周期 </h3><h3>Periodic table 周期表 </h3><h3>Permeable - base 可渗透基区 </h3><h3>Phase-lock loop 锁相环</h3><h3>Phase drift 相移 </h3><h3>Phonon spectra 声子谱 </h3><h3>Photo conduction 光电导</h3><h3> Photo diode 光电二极管 </h3><h3>Photoelectric cell 光电池 </h3><h3>Photoelectric effect 光电效应 </h3><h3>Photoenic devices 光子器件 </h3><h3>Photolithographic process 光刻工艺 </h3><h3>(photo) resist (光敏)抗腐蚀剂 </h3><h3>Pin 管脚 </h3><h3>Pinch off 夹断 </h3><h3>Pinning of Fermi level 费米能级的钉扎(效应) </h3><h3>Planar process 平面工艺 </h3><h3>Planar transistor 平面晶体管 </h3><h3>Plasma 等离子体 </h3><h3>Plezoelectric effect 压电效应 </h3><h3>Poisson equation 泊松方程 </h3><h3>Point contact 点接触 </h3><h3>Polarity 极性 </h3><h3>Polycrystal 多晶 </h3><h3>Polymer semiconductor聚合物半导体 </h3><h3>Poly-silicon 多晶硅 </h3><h3>Potential (电)势 </h3><h3>Potential barrier 势垒 </h3><h3>Potential well 势阱 </h3><h3>Power dissipation 功耗 </h3><h3>Power transistor 功率晶体管 </h3><h3>Preamplifier 前置放大器 </h3><h3>Primary flat 主平面 </h3><h3>Principal axes 主轴 </h3><h3>Print-circuit board(PCB) 印制电路板 </h3><h3>Probability 几率 </h3><h3>Probe 探针 </h3><h3>Process 工艺 </h3><h3>Propagation delay 传输延时 </h3><h3>Pseudopotential method 膺势发 </h3><h3>Punch through 穿通 </h3><h3>Pulse triggering/modulating 脉冲触发/调制Pulse </h3><h3>Widen Modulator(PWM) 脉冲宽度调制 </h3><h3>Punchthrough 穿通 </h3><h3>Push-pull stage 推挽级 </h3><h3><br></h3><h3>Q</h3><h3><br></h3><h3>Quality factor 品质因子 </h3><h3>Quantization 量子化 </h3><h3>Quantum 量子 </h3><h3>Quantum efficiency量子效应 </h3><h3>Quantum mechanics 量子力学 </h3><h3>Quasi Fermi-level准费米能级 </h3><h3>Quartz 石英 </h3><h3><br></h3><h3>R</h3> <h3>R</h3><h3><br></h3><h3>Radiation conductivity 辐射电导率 </h3><h3>Radiation damage 辐射损伤 </h3><h3>Radiation flux density 辐射通量密度 </h3><h3>Radiation hardening 辐射加固 </h3><h3>Radiation protection 辐射保护 </h3><h3>Radiative - recombination辐照复合 </h3><h3>Radioactive 放射性 </h3><h3>Reach through 穿通 </h3><h3>Reactive sputtering source 反应溅射源 </h3><h3>Read diode 里德二极管 </h3><h3>Recombination 复合 </h3><h3>Recovery diode 恢复二极管 </h3><h3>Reciprocal lattice 倒核子 </h3><h3>Recovery time 恢复时间 </h3><h3>Rectifier 整流器(管) </h3><h3>Rectifying contact 整流接触 </h3><h3>Reference 基准点 基准 参考点 </h3><h3>Refractive index 折射率 </h3><h3>Register 寄存器 </h3><h3>Registration 对准 </h3><h3>Regulate 控制 调整 </h3><h3>Relaxation lifetime 驰豫时间 </h3><h3>Reliability 可靠性 </h3><h3>Resonance 谐振 </h3><h3>Resistance 电阻 </h3><h3>Resistor 电阻器 </h3><h3>Resistivity 电阻率 </h3><h3>Regulator 稳压管(器) </h3><h3>Relaxation 驰豫 </h3><h3>Resonant frequency共射频率 </h3><h3>Response time 响应时间 </h3><h3>Reverse 反向的 </h3><h3>Reverse bias 反向偏置 </h3><h3><br></h3><h3>S</h3><h3><br></h3><h3>Sampling circuit 取样电路 </h3><h3>Sapphire 蓝宝石(Al2O3) </h3><h3>Satellite valley 卫星谷 </h3><h3>Saturated current range电流饱和区 </h3><h3>Saturation region 饱和区</h3><h3>Saturation 饱和的 </h3><h3>Scaled down 按比例缩小 </h3><h3>Scattering 散射 </h3><h3>Schockley diode 肖克莱二极管 </h3><h3>Schottky 肖特基 </h3><h3>Schottky barrier 肖特基势垒 </h3><h3>Schottky contact 肖特基接触 </h3><h3>Schrodingen 薛定厄 </h3><h3>Scribing grid 划片格 </h3><h3>Secondary flat 次平面 </h3><h3>Seed crystal 籽晶 </h3><h3>Segregation 分凝 </h3><h3>Selectivity 选择性 </h3><h3>Self aligned 自对准的 </h3><h3>Self diffusion 自扩散 </h3><h3>Semiconductor 半导体 </h3><h3>Semiconductor-controlled rectifier 可控硅 </h3><h3>Sendsitivity 灵敏度 </h3><h3>Serial 串行/串联 </h3><h3>Series inductance 串联电感 </h3><h3>Settle time 建立时间 </h3><h3>Sheet resistance 薄层电阻 </h3><h3>Shield 屏蔽</h3><h3>Short circuit 短路 </h3><h3>Shot noise 散粒噪声</h3><h3>Shunt 分流 </h3><h3>Sidewall capacitance </h3><h3>边墙电容 Signal 信号 </h3><h3>Silica glass 石英玻璃 </h3><h3>Silicon 硅 </h3><h3>Silicon carbide 碳化硅 </h3><h3>Silicon dioxide (SiO2) 二氧化硅 </h3><h3>Silicon Nitride(Si3N4) 氮化硅 </h3><h3>Silicon On Insulator 绝缘硅 </h3><h3>Siliver whiskers 银须 </h3><h3>Simple cubic 简立方 </h3><h3>Single crystal 单晶 </h3><h3>Sink 沉 </h3><h3>Skin effect 趋肤效应 </h3><h3>Snap time 急变时间 </h3><h3>Sneak path 潜行通路 </h3><h3>Sulethreshold 亚阈的 </h3><h3>Solar battery/cell 太阳能电池 </h3><h3>Solid circuit 固体电路 </h3><h3>Solid Solubility 固溶度 </h3><h3>Sonband 子带 </h3><h3>Source 源极 </h3><h3>Source follower 源随器 </h3><h3>Space charge 空间电荷 </h3><h3>Specific heat(PT) 热 </h3><h3>Speed-power product 速度功耗乘积 Spherical 球面的 </h3><h3>Spin 自旋 Split 分裂 </h3><h3>Spontaneous emission 自发发射 </h3><h3>Spreading resistance扩展电阻 </h3><h3>Sputter 溅射 Stacking fault 层错 </h3><h3>Static characteristic 静态特性 </h3><h3>Stimulated emission 受激发射 </h3><h3>Stimulated recombination 受激复合 </h3><h3>Storage time 存储时间 </h3><h3>Stress 应力 </h3><h3>Straggle 偏差 </h3><h3>Sublimation 升华 </h3><h3>Substrate 衬底 </h3><h3>Substitutional 替位式的 </h3><h3>Superlattice 超晶格 </h3><h3>Supply 电源 Surface 表面 </h3><h3>Surge capacity 浪涌能力 </h3><h3>Sub 下标 </h3><h3>Switching time 开关时间 </h3><h3>Switch 开关 </h3><h3><br></h3><h3>T</h3><h3><br></h3><h3>Tailing 扩展 </h3><h3>Terminal 终端 </h3><h3>Tensor 张量 Tensorial 张量的 </h3><h3>Thermal activation 热激发 </h3><h3>Thermal conductivity 热导率 </h3><h3>Thermal equilibrium 热平衡 </h3><h3>Thermal Oxidation 热氧化 </h3><h3>Thermal resistance 热阻 </h3><h3>Thermal sink 热沉 </h3><h3>Thermal velocity 热运动 </h3><h3>Thermoelectricpovoer 温差电动势率 </h3><h3>Thick-film technique 厚膜技术 </h3><h3>Thin-film hybrid IC薄膜混合集成电路 </h3><h3>Thin-Film Transistor(TFT) 薄膜晶体 </h3><h3>Threshlod 阈值 </h3><h3>Thyistor 晶闸管 </h3><h3>Transconductance 跨导 </h3><h3>Transfer characteristic 转移特性 </h3><h3>Transfer electron 转移电子 </h3><h3>Transfer function 传输函数 Transient 瞬态的 </h3><h3>Transistor aging(stress) 晶体管老化 </h3><h3>Transit time 渡越时间 </h3><h3>Transition 跃迁 </h3><h3>Transition-metal silica 过度金属硅化物 </h3><h3>Transition probability 跃迁几率 </h3><h3>Transition region 过渡区 </h3><h3>Transport 输运 Transverse 横向的 </h3><h3>Trap 陷阱 Trapping 俘获 </h3><h3>Trapped charge 陷阱电荷 </h3><h3>Triangle generator 三角波发生器 </h3><h3>Triboelectricity 摩擦电</h3><h3> Trigger 触发 </h3><h3>Trim 调配 调整 </h3><h3>Triple diffusion 三重扩散 </h3><h3>Truth table 真值表 </h3><h3>Tolerahce 容差 </h3><h3>Tunnel(ing) 隧道(穿) </h3><h3>Tunnel current 隧道电流 </h3><h3>Turn over 转折 </h3><h3>Turn - off time 关断时间 </h3><h3><br></h3><h3>U</h3><h3><br></h3><h3>Ultraviolet 紫外的 </h3><h3>Unijunction 单结的 </h3><h3>Unipolar 单极的 </h3><h3>Unit cell 原(元)胞 </h3><h3>Unity-gain frequency 单位增益频率 </h3><h3>Unilateral-switch单向开关 </h3><h3><br></h3><h3>V</h3><h3><br></h3><h3>Vacancy 空位 Vacuum 真空 </h3><h3>Valence(value) band 价带 Value band edge 价带顶 </h3><h3>Valence bond 价键 Vapour phase 汽相 </h3><h3>Varactor 变容管 Varistor 变阻器 </h3><h3>Vibration 振动 Voltage 电压 </h3><h3><br></h3><h3>W</h3><h3><br></h3><h3>Wafer 晶片 </h3><h3>Wave equation 波动方程 </h3><h3>Wave guide 波导 </h3><h3>Wave number 波数 </h3><h3>Wave-particle duality 波粒二相性 </h3><h3>Wear-out 烧毁 </h3><h3>Wire routing 布线 </h3><h3>Work function 功函数 </h3><h3>Worst-case device 最坏情况器件 </h3> <h3>Y<br></h3><h3><br></h3><h3>Yield 成品率 </h3><h3><br></h3><h3>Z</h3><h3><br></h3><h3>Zener breakdown 齐纳击穿 </h3><h3>Zone melting 区熔法</h3>